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Magnetoresistance manipulation and sign reversal in Mn-doped ZnO nanowires
We report magnetoresistance (MR) manipulation and sign reversal induced by carrier concentration modulation in Mn-doped ZnO nanowires. At low temperatures positive magnetoresistance was initially observed. When the carrier concentration was increased through the application of a gate voltage, the ma...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2016
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5064367/ https://www.ncbi.nlm.nih.gov/pubmed/27739442 http://dx.doi.org/10.1038/srep35036 |