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Magnetoresistance manipulation and sign reversal in Mn-doped ZnO nanowires
We report magnetoresistance (MR) manipulation and sign reversal induced by carrier concentration modulation in Mn-doped ZnO nanowires. At low temperatures positive magnetoresistance was initially observed. When the carrier concentration was increased through the application of a gate voltage, the ma...
Asıl Yazarlar: | , , , , |
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Materyal Türü: | Online Makale Metin |
Dil: | English |
Baskı/Yayın Bilgisi: |
Nature Publishing Group
2016
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Konular: | |
Online Erişim: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5064367/ https://www.ncbi.nlm.nih.gov/pubmed/27739442 http://dx.doi.org/10.1038/srep35036 |