Solution‐Processed Vertically Stacked Complementary Organic Circuits with Inkjet‐Printed Routing

The fabrication and measurements of solution‐processed vertically stacked complementary organic field‐effect transistors (FETs) with a high static noise margin (SNM) are reported. In the device structure, a bottom‐gate p‐type organic FET (PFET) is vertically integrated on a top‐gate n‐type organic F...

Descripción completa

Detalles Bibliográficos
Autores principales: Kwon, Jimin, Kyung, Sujeong, Yoon, Sejung, Kim, Jae‐Joon, Jung, Sungjune
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2016
Materias:
Full Papers
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5067658/
https://www.ncbi.nlm.nih.gov/pubmed/27812468
http://dx.doi.org/10.1002/advs.201500439

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5067658/
https://www.ncbi.nlm.nih.gov/pubmed/27812468
http://dx.doi.org/10.1002/advs.201500439

Ejemplares similares