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Solution‐Processed Vertically Stacked Complementary Organic Circuits with Inkjet‐Printed Routing
The fabrication and measurements of solution‐processed vertically stacked complementary organic field‐effect transistors (FETs) with a high static noise margin (SNM) are reported. In the device structure, a bottom‐gate p‐type organic FET (PFET) is vertically integrated on a top‐gate n‐type organic F...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
John Wiley and Sons Inc.
2016
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5067658/ https://www.ncbi.nlm.nih.gov/pubmed/27812468 http://dx.doi.org/10.1002/advs.201500439 |