Effective suppression of efficiency droop in GaN-based light-emitting diodes: role of significant reduction of carrier density and built-in field

A critical issue in GaN-based high power light-emitting diodes (LEDs) is how to suppress the efficiency droop problem occurred at high current injection while improving overall quantum efficiency, especially in conventional c-plane InGaN/GaN quantum well (QW), without using complicated bandgap engin...

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Detalles Bibliográficos
Autores principales: Yoo, Yang-Seok, Na, Jong-Ho, Son, Sung Jin, Cho, Yong-Hoon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5069459/
https://www.ncbi.nlm.nih.gov/pubmed/27756916
http://dx.doi.org/10.1038/srep34586

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5069459/
https://www.ncbi.nlm.nih.gov/pubmed/27756916
http://dx.doi.org/10.1038/srep34586

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