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Effective suppression of efficiency droop in GaN-based light-emitting diodes: role of significant reduction of carrier density and built-in field

A critical issue in GaN-based high power light-emitting diodes (LEDs) is how to suppress the efficiency droop problem occurred at high current injection while improving overall quantum efficiency, especially in conventional c-plane InGaN/GaN quantum well (QW), without using complicated bandgap engin...

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Detalles Bibliográficos
Autores principales:	Yoo, Yang-Seok, Na, Jong-Ho, Son, Sung Jin, Cho, Yong-Hoon
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group 2016
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5069459/ https://www.ncbi.nlm.nih.gov/pubmed/27756916 http://dx.doi.org/10.1038/srep34586

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