Electrical Contacts on Silicon Nanowires Produced by Metal-Assisted Etching: a Comparative Approach

Silicon nanowires fabricated by metal-assisted chemical etching can present low porosity and a rough surface depending on the doping level of the original silicon wafer. In this case, wiring of silicon nanowires may represent a challenging task. We investigated two different approaches to realize th...

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Detalles Bibliográficos
Autores principales: D’Ortenzi, L., Monsù, R., Cara, E., Fretto, M., Kara, S., Rezvani, S. J., Boarino, L.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2016
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5073083/
https://www.ncbi.nlm.nih.gov/pubmed/27766607
http://dx.doi.org/10.1186/s11671-016-1689-x

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5073083/
https://www.ncbi.nlm.nih.gov/pubmed/27766607
http://dx.doi.org/10.1186/s11671-016-1689-x

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