Electrical Contacts on Silicon Nanowires Produced by Metal-Assisted Etching: a Comparative Approach

Silicon nanowires fabricated by metal-assisted chemical etching can present low porosity and a rough surface depending on the doping level of the original silicon wafer. In this case, wiring of silicon nanowires may represent a challenging task. We investigated two different approaches to realize th...

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Detalles Bibliográficos
Autores principales: D’Ortenzi, L., Monsù, R., Cara, E., Fretto, M., Kara, S., Rezvani, S. J., Boarino, L.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2016
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5073083/
https://www.ncbi.nlm.nih.gov/pubmed/27766607
http://dx.doi.org/10.1186/s11671-016-1689-x
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author D’Ortenzi, L.
Monsù, R.
Cara, E.
Fretto, M.
Kara, S.
Rezvani, S. J.
Boarino, L.
author_facet D’Ortenzi, L.
Monsù, R.
Cara, E.
Fretto, M.
Kara, S.
Rezvani, S. J.
Boarino, L.
author_sort D’Ortenzi, L.
collection PubMed
description Silicon nanowires fabricated by metal-assisted chemical etching can present low porosity and a rough surface depending on the doping level of the original silicon wafer. In this case, wiring of silicon nanowires may represent a challenging task. We investigated two different approaches to realize the electrical contacts in order to enable electrical measurement on a rough silicon nanowire device: we compared FIB-assisted platinum deposition for the fabrication of electrical contact with EBL technique.
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spelling pubmed-50730832016-11-03 Electrical Contacts on Silicon Nanowires Produced by Metal-Assisted Etching: a Comparative Approach D’Ortenzi, L. Monsù, R. Cara, E. Fretto, M. Kara, S. Rezvani, S. J. Boarino, L. Nanoscale Res Lett Nano Express Silicon nanowires fabricated by metal-assisted chemical etching can present low porosity and a rough surface depending on the doping level of the original silicon wafer. In this case, wiring of silicon nanowires may represent a challenging task. We investigated two different approaches to realize the electrical contacts in order to enable electrical measurement on a rough silicon nanowire device: we compared FIB-assisted platinum deposition for the fabrication of electrical contact with EBL technique. Springer US 2016-10-20 /pmc/articles/PMC5073083/ /pubmed/27766607 http://dx.doi.org/10.1186/s11671-016-1689-x Text en © The Author(s). 2016 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Nano Express
D’Ortenzi, L.
Monsù, R.
Cara, E.
Fretto, M.
Kara, S.
Rezvani, S. J.
Boarino, L.
Electrical Contacts on Silicon Nanowires Produced by Metal-Assisted Etching: a Comparative Approach
title Electrical Contacts on Silicon Nanowires Produced by Metal-Assisted Etching: a Comparative Approach
title_full Electrical Contacts on Silicon Nanowires Produced by Metal-Assisted Etching: a Comparative Approach
title_fullStr Electrical Contacts on Silicon Nanowires Produced by Metal-Assisted Etching: a Comparative Approach
title_full_unstemmed Electrical Contacts on Silicon Nanowires Produced by Metal-Assisted Etching: a Comparative Approach
title_short Electrical Contacts on Silicon Nanowires Produced by Metal-Assisted Etching: a Comparative Approach
title_sort electrical contacts on silicon nanowires produced by metal-assisted etching: a comparative approach
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5073083/
https://www.ncbi.nlm.nih.gov/pubmed/27766607
http://dx.doi.org/10.1186/s11671-016-1689-x
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