Enhancing electric-field control of ferromagnetism through nanoscale engineering of high-T(c) Mn(x)Ge(1−x) nanomesh

Voltage control of magnetism in ferromagnetic semiconductor has emerged as an appealing solution to significantly reduce the power dissipation and variability beyond current CMOS technology. However, it has been proven to be very challenging to achieve a candidate with high Curie temperature (T(c)),...

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Detalles Bibliográficos
Autores principales: Nie, Tianxiao, Tang, Jianshi, Kou, Xufeng, Gen, Yin, Lee, Shengwei, Zhu, Xiaodan, He, Qinglin, Chang, Li-Te, Murata, Koichi, Fan, Yabin, Wang, Kang L.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5080415/
https://www.ncbi.nlm.nih.gov/pubmed/27762320
http://dx.doi.org/10.1038/ncomms12866

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5080415/
https://www.ncbi.nlm.nih.gov/pubmed/27762320
http://dx.doi.org/10.1038/ncomms12866

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