Effect of tetramethylammonium hydroxide/isopropyl alcohol wet etching on geometry and surface roughness of silicon nanowires fabricated by AFM lithography

The optimization of etchant parameters in wet etching plays an important role in the fabrication of semiconductor devices. Wet etching of tetramethylammonium hydroxide (TMAH)/isopropyl alcohol (IPA) on silicon nanowires fabricated by AFM lithography is studied herein. TMAH (25 wt %) with different I...

Descripción completa

Detalles Bibliográficos
Autores principales: Yusoh, Siti Noorhaniah, Yaacob, Khatijah Aisha
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Beilstein-Institut 2016
Materias:
Full Research Paper
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5082450/
https://www.ncbi.nlm.nih.gov/pubmed/27826521
http://dx.doi.org/10.3762/bjnano.7.138

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5082450/
https://www.ncbi.nlm.nih.gov/pubmed/27826521
http://dx.doi.org/10.3762/bjnano.7.138

Ejemplares similares