Growth and applications of GeSn-related group-IV semiconductor materials

We review the technology of Ge(1−x)Sn(x)-related group-IV semiconductor materials for developing Si-based nanoelectronics. Ge(1−x)Sn(x)-related materials provide novel engineering of the crystal growth, strain structure, and energy band alignment for realising various applications not only in electr...

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Detalles Bibliográficos
Autores principales: Zaima, Shigeaki, Nakatsuka, Osamu, Taoka, Noriyuki, Kurosawa, Masashi, Takeuchi, Wakana, Sakashita, Mitsuo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Taylor & Francis 2015
Materias:
Reviews
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5090177/
https://www.ncbi.nlm.nih.gov/pubmed/27877818
http://dx.doi.org/10.1088/1468-6996/16/4/043502

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5090177/
https://www.ncbi.nlm.nih.gov/pubmed/27877818
http://dx.doi.org/10.1088/1468-6996/16/4/043502

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