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Effect of zinc addition and vacuum annealing time on the properties of spin-coated low-cost transparent conducting 1 at% Ga–ZnO thin films
Pure and 1 at% gallium (Ga)-doped zinc oxide (ZnO) thin films have been prepared with a low-cost spin coating technique on quartz substrates and annealed at 500 °C in vacuum ∼10(−3) mbar to create anion vacancies and generate charge carriers for photovoltaic application. Also, 0.5–1.5 at% extra zinc...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Taylor & Francis
2013
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5090303/ https://www.ncbi.nlm.nih.gov/pubmed/27877622 http://dx.doi.org/10.1088/1468-6996/14/6/065002 |