Material design of plasma-enhanced chemical vapour deposition SiCH films for low-k cap layers in the further scaling of ultra-large-scale integrated devices-Cu interconnects

Cap layers for Cu interconnects in ultra-large-scale integrated devices (ULSIs), with a low dielectric constant (k-value) and strong barrier properties against Cu and moisture diffusion, are required for the future further scaling of ULSIs. There is a trade-off, however, between reducing the k-value...

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Detalles Bibliográficos
Autores principales: Shimizu, Hideharu, Nagano, Shuji, Uedono, Akira, Tajima, Nobuo, Momose, Takeshi, Shimogaki, Yukihiro
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Taylor & Francis 2013
Materias:
Papers
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5090375/
https://www.ncbi.nlm.nih.gov/pubmed/27877612
http://dx.doi.org/10.1088/1468-6996/14/5/055005

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5090375/
https://www.ncbi.nlm.nih.gov/pubmed/27877612
http://dx.doi.org/10.1088/1468-6996/14/5/055005

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