High-rate and wide-area deposition of epitaxial Si films by mesoplasma chemical vapor deposition

Homoepitaxial Si films have been deposited at a high rate of 200 nm s(−1) over a wide area of 20 mm × 80 mm by cluster-assisted mesoplasma chemical vapor deposition (MPCVD) on a moving substrate. The obtained epitaxial Si films exhibited a uniform roughness of 0.1–0.3 nm (1 × 1 μm(2)) and a Hall mob...

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Detalles Bibliográficos
Autores principales: Wu, Sudong, Sawada, Kento, Ichimaru, Tomonori, Yamamoto, Takanori, Kambara, Makoto, Yoshida, Toyonobu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Taylor & Francis 2014
Materias:
Papers
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5090522/
https://www.ncbi.nlm.nih.gov/pubmed/27877677
http://dx.doi.org/10.1088/1468-6996/15/3/035001

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5090522/
https://www.ncbi.nlm.nih.gov/pubmed/27877677
http://dx.doi.org/10.1088/1468-6996/15/3/035001

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