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High-rate and wide-area deposition of epitaxial Si films by mesoplasma chemical vapor deposition
Homoepitaxial Si films have been deposited at a high rate of 200 nm s(−1) over a wide area of 20 mm × 80 mm by cluster-assisted mesoplasma chemical vapor deposition (MPCVD) on a moving substrate. The obtained epitaxial Si films exhibited a uniform roughness of 0.1–0.3 nm (1 × 1 μm(2)) and a Hall mob...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Taylor & Francis
2014
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5090522/ https://www.ncbi.nlm.nih.gov/pubmed/27877677 http://dx.doi.org/10.1088/1468-6996/15/3/035001 |