Determination of the surface band bending in In(x)Ga(1−x)N films by hard x-ray photoemission spectroscopy

Core-level and valence band spectra of In(x)Ga(1−x)N films were measured using hard x-ray photoemission spectroscopy (HX-PES). Fine structure, caused by the coupling of the localized Ga 3d and In 4d with N 2s states, was experimentally observed in the films. Because of the large detection depth of H...

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Detalles Bibliográficos
Autores principales: Lozac'h, Mickael, Ueda, Shigenori, Liu, Shitao, Yoshikawa, Hideki, Liwen, Sang, Wang, Xinqiang, Shen, Bo, Sakoda, Kazuaki, Kobayashi, Keisuke, Sumiya, Masatomo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Taylor & Francis 2013
Materias:
Papers
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5090583/
https://www.ncbi.nlm.nih.gov/pubmed/27877565
http://dx.doi.org/10.1088/1468-6996/14/1/015007

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5090583/
https://www.ncbi.nlm.nih.gov/pubmed/27877565
http://dx.doi.org/10.1088/1468-6996/14/1/015007

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