Epitaxial growth of BaHfO(3) buffer layer and its structure degeneration analysed by Raman spectrum

BaHfO(3) (BHO) has been proposed as a new cap layer material for YBa(2)Cu(3)O(7−δ) (YBCO) coated conductors. Highly c-axis oriented BHO cap layer has been deposited on ion-beam assisted deposition-MgO buffered Hastelloy tapes by direct-current-magnetron sputtering method. The epi-growth of BHO films...

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Detalles Bibliográficos
Autores principales: Zheng, Jiahui, Fan, Feng, Yan, Xiangfa, Lu, Yuming, Liang, Yu, Bai, Chuanyi, Liu, Zhiyong, Guo, Yanqun, Cai, Chuanbing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer International Publishing 2016
Materias:
Research
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5095105/
https://www.ncbi.nlm.nih.gov/pubmed/27867815
http://dx.doi.org/10.1186/s40064-016-3563-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5095105/
https://www.ncbi.nlm.nih.gov/pubmed/27867815
http://dx.doi.org/10.1186/s40064-016-3563-9

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