Permanent ferroelectric retention of BiFeO(3) mesocrystal

Non-volatile electronic devices based on magnetoelectric multiferroics have triggered new possibilities of outperforming conventional devices for applications. However, ferroelectric reliability issues, such as imprint, retention and fatigue, must be solved before the realization of practical device...

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Detalles Bibliográficos
Autores principales: Hsieh, Ying-Hui, Xue, Fei, Yang, Tiannan, Liu, Heng-Jui, Zhu, Yuanmin, Chen, Yi-Chun, Zhan, Qian, Duan, Chun-Gang, Chen, Long-Qing, He, Qing, Chu, Ying-Hao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5095170/
https://www.ncbi.nlm.nih.gov/pubmed/27782123
http://dx.doi.org/10.1038/ncomms13199

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5095170/
https://www.ncbi.nlm.nih.gov/pubmed/27782123
http://dx.doi.org/10.1038/ncomms13199

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