Engineering of band gap states of amorphous SiZnSnO semiconductor as a function of Si doping concentration

We investigated the band gap of SiZnSnO (SZTO) with different Si contents. Band gap engineering of SZTO is explained by the evolution of the electronic structure, such as changes in the band edge states and band gap. Using ultraviolet photoelectron spectroscopy (UPS), it was verified that Si atoms c...

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Detalles Bibliográficos
Autores principales: Choi, Jun Young, Heo, Keun, Cho, Kyung-Sang, Hwang, Sung Woo, Kim, Sangsig, Lee, Sang Yeol
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5095643/
https://www.ncbi.nlm.nih.gov/pubmed/27812035
http://dx.doi.org/10.1038/srep36504

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5095643/
https://www.ncbi.nlm.nih.gov/pubmed/27812035
http://dx.doi.org/10.1038/srep36504

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