Resistive Switching in All-Printed, Flexible and Hybrid MoS(2)-PVA Nanocomposite based Memristive Device Fabricated by Reverse Offset

Owing to the increasing interest in the nonvolatile memory devices, resistive switching based on hybrid nanocomposite of a 2D material, molybdenum disulphide (MoS(2)) and polyvinyl alcohol (PVA) is explored in this work. As a proof of concept, we have demonstrated the fabrication of a memory device...

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Detalles Bibliográficos
Autores principales: Rehman, Muhammad Muqeet, Siddiqui, Ghayas Uddin, Gul, Jahan Zeb, Kim, Soo-Wan, Lim, Jong Hwan, Choi, Kyung Hyun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5095886/
https://www.ncbi.nlm.nih.gov/pubmed/27811977
http://dx.doi.org/10.1038/srep36195

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5095886/
https://www.ncbi.nlm.nih.gov/pubmed/27811977
http://dx.doi.org/10.1038/srep36195

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