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Resistive Switching in All-Printed, Flexible and Hybrid MoS(2)-PVA Nanocomposite based Memristive Device Fabricated by Reverse Offset
Owing to the increasing interest in the nonvolatile memory devices, resistive switching based on hybrid nanocomposite of a 2D material, molybdenum disulphide (MoS(2)) and polyvinyl alcohol (PVA) is explored in this work. As a proof of concept, we have demonstrated the fabrication of a memory device...
Autores principales: | Rehman, Muhammad Muqeet, Siddiqui, Ghayas Uddin, Gul, Jahan Zeb, Kim, Soo-Wan, Lim, Jong Hwan, Choi, Kyung Hyun |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2016
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5095886/ https://www.ncbi.nlm.nih.gov/pubmed/27811977 http://dx.doi.org/10.1038/srep36195 |
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