Performance Improvement of AlN Crystal Quality Grown on Patterned Si(111) Substrate for Deep UV-LED Applications

An AlN template layer is required for growth of AlGaN-based deep ultraviolet light-emitting diodes (UV-LEDs). However, the crystal quality of AlN templates grown on both flat and patterned Si substrates has so far been insufficient for replacing templates grown on sapphire substrates. In this work,...

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Detalles Bibliográficos
Autores principales: Tran, Binh Tinh, Maeda, Noritoshi, Jo, Masafumi, Inoue, Daishi, Kikitsu, Tomoka, Hirayama, Hideki
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5098136/
https://www.ncbi.nlm.nih.gov/pubmed/27819331
http://dx.doi.org/10.1038/srep35681

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5098136/
https://www.ncbi.nlm.nih.gov/pubmed/27819331
http://dx.doi.org/10.1038/srep35681

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