A review of molecular beam epitaxy of ferroelectric BaTiO(3) films on Si, Ge and GaAs substrates and their applications

SrTiO(3) epitaxial growth by molecular beam epitaxy (MBE) on silicon has opened up the route to the monolithic integration of various complex oxides on the complementary metal-oxide–semiconductor silicon platform. Among functional oxides, ferroelectric perovskite oxides offer promising perspectives...

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Detalles Bibliográficos
Autores principales: Mazet, Lucie, Yang, Sang Mo, Kalinin, Sergei V, Schamm-Chardon, Sylvie, Dubourdieu, Catherine
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Taylor & Francis 2015
Materias:
Focus on Properties and Applications of Perovskites
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5099853/
https://www.ncbi.nlm.nih.gov/pubmed/27877816
http://dx.doi.org/10.1088/1468-6996/16/3/036005

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5099853/
https://www.ncbi.nlm.nih.gov/pubmed/27877816
http://dx.doi.org/10.1088/1468-6996/16/3/036005

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