NEXAFS study of electronic and atomic structure of active layer in Al/indium tin oxide/TiO(2) stack during resistive switching

We have studied the stability of the resistive switching process in the Al/(In(2)O(3))(0.9)(SnO(2))(0.1)/TiO(2) assembly grown by atomic layer deposition. Besides electrical characterization the effect of electric field on the atomic electronic structure of the TiO(2) layer was studied using near ed...

Descripción completa

Detalles Bibliográficos
Autores principales: Filatova, Elena, Konashuk, Aleksei, Petrov, Yuri, Ubyivovk, Evgeny, Sokolov, Andrey, Selivanov, Andrei, Drozd, Victor
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Taylor & Francis 2016
Materias:
Optical, Magnetic and Electronic Device Materials
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5101899/
https://www.ncbi.nlm.nih.gov/pubmed/27877880
http://dx.doi.org/10.1080/14686996.2016.1182851

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5101899/
https://www.ncbi.nlm.nih.gov/pubmed/27877880
http://dx.doi.org/10.1080/14686996.2016.1182851

Ejemplares similares