NEXAFS study of electronic and atomic structure of active layer in Al/indium tin oxide/TiO(2) stack during resistive switching

We have studied the stability of the resistive switching process in the Al/(In(2)O(3))(0.9)(SnO(2))(0.1)/TiO(2) assembly grown by atomic layer deposition. Besides electrical characterization the effect of electric field on the atomic electronic structure of the TiO(2) layer was studied using near ed...

Descripción completa

Detalles Bibliográficos
Autores principales: Filatova, Elena, Konashuk, Aleksei, Petrov, Yuri, Ubyivovk, Evgeny, Sokolov, Andrey, Selivanov, Andrei, Drozd, Victor
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Taylor & Francis 2016
Materias:
Optical, Magnetic and Electronic Device Materials
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5101899/
https://www.ncbi.nlm.nih.gov/pubmed/27877880
http://dx.doi.org/10.1080/14686996.2016.1182851
_version_ 1782466373758222336
author Filatova, Elena
Konashuk, Aleksei
Petrov, Yuri
Ubyivovk, Evgeny
Sokolov, Andrey
Selivanov, Andrei
Drozd, Victor
author_facet Filatova, Elena
Konashuk, Aleksei
Petrov, Yuri
Ubyivovk, Evgeny
Sokolov, Andrey
Selivanov, Andrei
Drozd, Victor
author_sort Filatova, Elena
collection PubMed
description We have studied the stability of the resistive switching process in the Al/(In(2)O(3))(0.9)(SnO(2))(0.1)/TiO(2) assembly grown by atomic layer deposition. Besides electrical characterization the effect of electric field on the atomic electronic structure of the TiO(2) layer was studied using near edge X-ray absorption fine structure (NEXAFS) spectroscopy. The region of the current instability in the I-V characteristics was revealed. Presumably this current instability is supported by the amorphous structure of the TiO(2) film but is initiated by the surface morphology of the Al substrate. A formation of the O(2) molecules was established which occurs specifically in the region of the current instability that is a result of electrical Joule heating manifestation.
format Online
Article
Text
id pubmed-5101899
institution National Center for Biotechnology Information
language English
publishDate 2016
publisher Taylor & Francis
record_format MEDLINE/PubMed
spelling pubmed-51018992016-11-22 NEXAFS study of electronic and atomic structure of active layer in Al/indium tin oxide/TiO(2) stack during resistive switching Filatova, Elena Konashuk, Aleksei Petrov, Yuri Ubyivovk, Evgeny Sokolov, Andrey Selivanov, Andrei Drozd, Victor Sci Technol Adv Mater Optical, Magnetic and Electronic Device Materials We have studied the stability of the resistive switching process in the Al/(In(2)O(3))(0.9)(SnO(2))(0.1)/TiO(2) assembly grown by atomic layer deposition. Besides electrical characterization the effect of electric field on the atomic electronic structure of the TiO(2) layer was studied using near edge X-ray absorption fine structure (NEXAFS) spectroscopy. The region of the current instability in the I-V characteristics was revealed. Presumably this current instability is supported by the amorphous structure of the TiO(2) film but is initiated by the surface morphology of the Al substrate. A formation of the O(2) molecules was established which occurs specifically in the region of the current instability that is a result of electrical Joule heating manifestation. Taylor & Francis 2016-06-24 /pmc/articles/PMC5101899/ /pubmed/27877880 http://dx.doi.org/10.1080/14686996.2016.1182851 Text en © 2016 The Author(s). Published by National Institute for Materials Science in partnership with Taylor & Francis http://creativecommons.org/licenses/by/4.0/ This is an Open Access article distributed under the terms of the Creative Commons Attribution License CC-BYhttp://creativecommons.org/licenses/by/4.0/which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Optical, Magnetic and Electronic Device Materials
Filatova, Elena
Konashuk, Aleksei
Petrov, Yuri
Ubyivovk, Evgeny
Sokolov, Andrey
Selivanov, Andrei
Drozd, Victor
NEXAFS study of electronic and atomic structure of active layer in Al/indium tin oxide/TiO(2) stack during resistive switching
title NEXAFS study of electronic and atomic structure of active layer in Al/indium tin oxide/TiO(2) stack during resistive switching
title_full NEXAFS study of electronic and atomic structure of active layer in Al/indium tin oxide/TiO(2) stack during resistive switching
title_fullStr NEXAFS study of electronic and atomic structure of active layer in Al/indium tin oxide/TiO(2) stack during resistive switching
title_full_unstemmed NEXAFS study of electronic and atomic structure of active layer in Al/indium tin oxide/TiO(2) stack during resistive switching
title_short NEXAFS study of electronic and atomic structure of active layer in Al/indium tin oxide/TiO(2) stack during resistive switching
title_sort nexafs study of electronic and atomic structure of active layer in al/indium tin oxide/tio(2) stack during resistive switching
topic Optical, Magnetic and Electronic Device Materials
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5101899/
https://www.ncbi.nlm.nih.gov/pubmed/27877880
http://dx.doi.org/10.1080/14686996.2016.1182851
work_keys_str_mv AT filatovaelena nexafsstudyofelectronicandatomicstructureofactivelayerinalindiumtinoxidetio2stackduringresistiveswitching
AT konashukaleksei nexafsstudyofelectronicandatomicstructureofactivelayerinalindiumtinoxidetio2stackduringresistiveswitching
AT petrovyuri nexafsstudyofelectronicandatomicstructureofactivelayerinalindiumtinoxidetio2stackduringresistiveswitching
AT ubyivovkevgeny nexafsstudyofelectronicandatomicstructureofactivelayerinalindiumtinoxidetio2stackduringresistiveswitching
AT sokolovandrey nexafsstudyofelectronicandatomicstructureofactivelayerinalindiumtinoxidetio2stackduringresistiveswitching
AT selivanovandrei nexafsstudyofelectronicandatomicstructureofactivelayerinalindiumtinoxidetio2stackduringresistiveswitching
AT drozdvictor nexafsstudyofelectronicandatomicstructureofactivelayerinalindiumtinoxidetio2stackduringresistiveswitching

Ejemplares similares