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NEXAFS study of electronic and atomic structure of active layer in Al/indium tin oxide/TiO(2) stack during resistive switching

We have studied the stability of the resistive switching process in the Al/(In(2)O(3))(0.9)(SnO(2))(0.1)/TiO(2) assembly grown by atomic layer deposition. Besides electrical characterization the effect of electric field on the atomic electronic structure of the TiO(2) layer was studied using near ed...

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Detalles Bibliográficos
Autores principales:	Filatova, Elena, Konashuk, Aleksei, Petrov, Yuri, Ubyivovk, Evgeny, Sokolov, Andrey, Selivanov, Andrei, Drozd, Victor
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Taylor & Francis 2016
Materias:	Optical, Magnetic and Electronic Device Materials
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5101899/ https://www.ncbi.nlm.nih.gov/pubmed/27877880 http://dx.doi.org/10.1080/14686996.2016.1182851

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