Ultrafast, Broadband Photodetector Based on MoSe(2)/Silicon Heterojunction with Vertically Standing Layered Structure Using Graphene as Transparent Electrode

A MoSe(2)/Si heterojunction photodetector is constructed by depositing MoSe(2) film with vertically standing layered structure on Si substrate. Graphene transparent electrode is utilized to further enhance the separation and transport of photogenerated carriers. The device shows excellent performanc...

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Detalles Bibliográficos
Autores principales: Mao, Jie, Yu, Yongqiang, Wang, Liu, Zhang, Xiujuan, Wang, Yuming, Shao, Zhibin, Jie, Jiansheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2016
Materias:
Communications
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5102659/
https://www.ncbi.nlm.nih.gov/pubmed/27980984
http://dx.doi.org/10.1002/advs.201600018

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5102659/
https://www.ncbi.nlm.nih.gov/pubmed/27980984
http://dx.doi.org/10.1002/advs.201600018

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