Ultrafast, Broadband Photodetector Based on MoSe(2)/Silicon Heterojunction with Vertically Standing Layered Structure Using Graphene as Transparent Electrode

A MoSe(2)/Si heterojunction photodetector is constructed by depositing MoSe(2) film with vertically standing layered structure on Si substrate. Graphene transparent electrode is utilized to further enhance the separation and transport of photogenerated carriers. The device shows excellent performanc...

Descripción completa

Detalles Bibliográficos
Autores principales: Mao, Jie, Yu, Yongqiang, Wang, Liu, Zhang, Xiujuan, Wang, Yuming, Shao, Zhibin, Jie, Jiansheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2016
Materias:
Communications
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5102659/
https://www.ncbi.nlm.nih.gov/pubmed/27980984
http://dx.doi.org/10.1002/advs.201600018
_version_ 1782466463518425088
author Mao, Jie
Yu, Yongqiang
Wang, Liu
Zhang, Xiujuan
Wang, Yuming
Shao, Zhibin
Jie, Jiansheng
author_facet Mao, Jie
Yu, Yongqiang
Wang, Liu
Zhang, Xiujuan
Wang, Yuming
Shao, Zhibin
Jie, Jiansheng
author_sort Mao, Jie
collection PubMed
description A MoSe(2)/Si heterojunction photodetector is constructed by depositing MoSe(2) film with vertically standing layered structure on Si substrate. Graphene transparent electrode is utilized to further enhance the separation and transport of photogenerated carriers. The device shows excellent performance in terms of wide response spectrum of UV–visible–NIR, high detectivity of 7.13 × 10(10) Jones, and ultrafast response speed of ≈270 ns, unveiling the great potential for the heterojunction for high‐performance optoelectronic devices. [Image: see text]
format Online
Article
Text
id pubmed-5102659
institution National Center for Biotechnology Information
language English
publishDate 2016
publisher John Wiley and Sons Inc.
record_format MEDLINE/PubMed
spelling pubmed-51026592016-11-16 Ultrafast, Broadband Photodetector Based on MoSe(2)/Silicon Heterojunction with Vertically Standing Layered Structure Using Graphene as Transparent Electrode Mao, Jie Yu, Yongqiang Wang, Liu Zhang, Xiujuan Wang, Yuming Shao, Zhibin Jie, Jiansheng Adv Sci (Weinh) Communications A MoSe(2)/Si heterojunction photodetector is constructed by depositing MoSe(2) film with vertically standing layered structure on Si substrate. Graphene transparent electrode is utilized to further enhance the separation and transport of photogenerated carriers. The device shows excellent performance in terms of wide response spectrum of UV–visible–NIR, high detectivity of 7.13 × 10(10) Jones, and ultrafast response speed of ≈270 ns, unveiling the great potential for the heterojunction for high‐performance optoelectronic devices. [Image: see text] John Wiley and Sons Inc. 2016-07-05 /pmc/articles/PMC5102659/ /pubmed/27980984 http://dx.doi.org/10.1002/advs.201600018 Text en © 2016 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim This is an open access article under the terms of the Creative Commons Attribution (http://creativecommons.org/licenses/by/4.0/) License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.
spellingShingle Communications
Mao, Jie
Yu, Yongqiang
Wang, Liu
Zhang, Xiujuan
Wang, Yuming
Shao, Zhibin
Jie, Jiansheng
Ultrafast, Broadband Photodetector Based on MoSe(2)/Silicon Heterojunction with Vertically Standing Layered Structure Using Graphene as Transparent Electrode
title Ultrafast, Broadband Photodetector Based on MoSe(2)/Silicon Heterojunction with Vertically Standing Layered Structure Using Graphene as Transparent Electrode
title_full Ultrafast, Broadband Photodetector Based on MoSe(2)/Silicon Heterojunction with Vertically Standing Layered Structure Using Graphene as Transparent Electrode
title_fullStr Ultrafast, Broadband Photodetector Based on MoSe(2)/Silicon Heterojunction with Vertically Standing Layered Structure Using Graphene as Transparent Electrode
title_full_unstemmed Ultrafast, Broadband Photodetector Based on MoSe(2)/Silicon Heterojunction with Vertically Standing Layered Structure Using Graphene as Transparent Electrode
title_short Ultrafast, Broadband Photodetector Based on MoSe(2)/Silicon Heterojunction with Vertically Standing Layered Structure Using Graphene as Transparent Electrode
title_sort ultrafast, broadband photodetector based on mose(2)/silicon heterojunction with vertically standing layered structure using graphene as transparent electrode
topic Communications
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5102659/
https://www.ncbi.nlm.nih.gov/pubmed/27980984
http://dx.doi.org/10.1002/advs.201600018
work_keys_str_mv AT maojie ultrafastbroadbandphotodetectorbasedonmose2siliconheterojunctionwithverticallystandinglayeredstructureusinggrapheneastransparentelectrode
AT yuyongqiang ultrafastbroadbandphotodetectorbasedonmose2siliconheterojunctionwithverticallystandinglayeredstructureusinggrapheneastransparentelectrode
AT wangliu ultrafastbroadbandphotodetectorbasedonmose2siliconheterojunctionwithverticallystandinglayeredstructureusinggrapheneastransparentelectrode
AT zhangxiujuan ultrafastbroadbandphotodetectorbasedonmose2siliconheterojunctionwithverticallystandinglayeredstructureusinggrapheneastransparentelectrode
AT wangyuming ultrafastbroadbandphotodetectorbasedonmose2siliconheterojunctionwithverticallystandinglayeredstructureusinggrapheneastransparentelectrode
AT shaozhibin ultrafastbroadbandphotodetectorbasedonmose2siliconheterojunctionwithverticallystandinglayeredstructureusinggrapheneastransparentelectrode
AT jiejiansheng ultrafastbroadbandphotodetectorbasedonmose2siliconheterojunctionwithverticallystandinglayeredstructureusinggrapheneastransparentelectrode

Ejemplares similares