Trap-mediated electronic transport properties of gate-tunable pentacene/MoS(2) p-n heterojunction diodes

We investigated the trap-mediated electronic transport properties of pentacene/molybdenum disulphide (MoS(2)) p-n heterojunction devices. We observed that the hybrid p-n heterojunctions were gate-tunable and were strongly affected by trap-assisted tunnelling through the van der Waals gap at the hete...

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Detalles Bibliográficos
Autores principales: Kim, Jae-Keun, Cho, Kyungjune, Kim, Tae-Young, Pak, Jinsu, Jang, Jingon, Song, Younggul, Kim, Youngrok, Choi, Barbara Yuri, Chung, Seungjun, Hong, Woong-Ki, Lee, Takhee
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5103186/
https://www.ncbi.nlm.nih.gov/pubmed/27829663
http://dx.doi.org/10.1038/srep36775

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5103186/
https://www.ncbi.nlm.nih.gov/pubmed/27829663
http://dx.doi.org/10.1038/srep36775

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