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Trap-mediated electronic transport properties of gate-tunable pentacene/MoS(2) p-n heterojunction diodes

We investigated the trap-mediated electronic transport properties of pentacene/molybdenum disulphide (MoS(2)) p-n heterojunction devices. We observed that the hybrid p-n heterojunctions were gate-tunable and were strongly affected by trap-assisted tunnelling through the van der Waals gap at the hete...

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Autores principales: Kim, Jae-Keun, Cho, Kyungjune, Kim, Tae-Young, Pak, Jinsu, Jang, Jingon, Song, Younggul, Kim, Youngrok, Choi, Barbara Yuri, Chung, Seungjun, Hong, Woong-Ki, Lee, Takhee
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5103186/
https://www.ncbi.nlm.nih.gov/pubmed/27829663
http://dx.doi.org/10.1038/srep36775
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author Kim, Jae-Keun
Cho, Kyungjune
Kim, Tae-Young
Pak, Jinsu
Jang, Jingon
Song, Younggul
Kim, Youngrok
Choi, Barbara Yuri
Chung, Seungjun
Hong, Woong-Ki
Lee, Takhee
author_facet Kim, Jae-Keun
Cho, Kyungjune
Kim, Tae-Young
Pak, Jinsu
Jang, Jingon
Song, Younggul
Kim, Youngrok
Choi, Barbara Yuri
Chung, Seungjun
Hong, Woong-Ki
Lee, Takhee
author_sort Kim, Jae-Keun
collection PubMed
description We investigated the trap-mediated electronic transport properties of pentacene/molybdenum disulphide (MoS(2)) p-n heterojunction devices. We observed that the hybrid p-n heterojunctions were gate-tunable and were strongly affected by trap-assisted tunnelling through the van der Waals gap at the heterojunction interfaces between MoS(2) and pentacene. The pentacene/MoS(2) p-n heterojunction diodes had gate-tunable high ideality factor, which resulted from trap-mediated conduction nature of devices. From the temperature-variable current-voltage measurement, a space-charge-limited conduction and a variable range hopping conduction at a low temperature were suggested as the gate-tunable charge transport characteristics of these hybrid p-n heterojunctions. Our study provides a better understanding of the trap-mediated electronic transport properties in organic/2-dimensional material hybrid heterojunction devices.
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spelling pubmed-51031862016-11-14 Trap-mediated electronic transport properties of gate-tunable pentacene/MoS(2) p-n heterojunction diodes Kim, Jae-Keun Cho, Kyungjune Kim, Tae-Young Pak, Jinsu Jang, Jingon Song, Younggul Kim, Youngrok Choi, Barbara Yuri Chung, Seungjun Hong, Woong-Ki Lee, Takhee Sci Rep Article We investigated the trap-mediated electronic transport properties of pentacene/molybdenum disulphide (MoS(2)) p-n heterojunction devices. We observed that the hybrid p-n heterojunctions were gate-tunable and were strongly affected by trap-assisted tunnelling through the van der Waals gap at the heterojunction interfaces between MoS(2) and pentacene. The pentacene/MoS(2) p-n heterojunction diodes had gate-tunable high ideality factor, which resulted from trap-mediated conduction nature of devices. From the temperature-variable current-voltage measurement, a space-charge-limited conduction and a variable range hopping conduction at a low temperature were suggested as the gate-tunable charge transport characteristics of these hybrid p-n heterojunctions. Our study provides a better understanding of the trap-mediated electronic transport properties in organic/2-dimensional material hybrid heterojunction devices. Nature Publishing Group 2016-11-10 /pmc/articles/PMC5103186/ /pubmed/27829663 http://dx.doi.org/10.1038/srep36775 Text en Copyright © 2016, The Author(s) http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Kim, Jae-Keun
Cho, Kyungjune
Kim, Tae-Young
Pak, Jinsu
Jang, Jingon
Song, Younggul
Kim, Youngrok
Choi, Barbara Yuri
Chung, Seungjun
Hong, Woong-Ki
Lee, Takhee
Trap-mediated electronic transport properties of gate-tunable pentacene/MoS(2) p-n heterojunction diodes
title Trap-mediated electronic transport properties of gate-tunable pentacene/MoS(2) p-n heterojunction diodes
title_full Trap-mediated electronic transport properties of gate-tunable pentacene/MoS(2) p-n heterojunction diodes
title_fullStr Trap-mediated electronic transport properties of gate-tunable pentacene/MoS(2) p-n heterojunction diodes
title_full_unstemmed Trap-mediated electronic transport properties of gate-tunable pentacene/MoS(2) p-n heterojunction diodes
title_short Trap-mediated electronic transport properties of gate-tunable pentacene/MoS(2) p-n heterojunction diodes
title_sort trap-mediated electronic transport properties of gate-tunable pentacene/mos(2) p-n heterojunction diodes
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5103186/
https://www.ncbi.nlm.nih.gov/pubmed/27829663
http://dx.doi.org/10.1038/srep36775
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