Multistate Memristive Tantalum Oxide Devices for Ternary Arithmetic

Redox-based resistive switching random access memory (ReRAM) offers excellent properties to implement future non-volatile memory arrays. Recently, the capability of two-state ReRAMs to implement Boolean logic functionality gained wide interest. Here, we report on seven-states Tantalum Oxide Devices,...

Descripción completa

Detalles Bibliográficos
Autores principales: Kim, Wonjoo, Chattopadhyay, Anupam, Siemon, Anne, Linn, Eike, Waser, Rainer, Rana, Vikas
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5105152/
https://www.ncbi.nlm.nih.gov/pubmed/27834352
http://dx.doi.org/10.1038/srep36652

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5105152/
https://www.ncbi.nlm.nih.gov/pubmed/27834352
http://dx.doi.org/10.1038/srep36652

Ejemplares similares