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Multistate Memristive Tantalum Oxide Devices for Ternary Arithmetic

Redox-based resistive switching random access memory (ReRAM) offers excellent properties to implement future non-volatile memory arrays. Recently, the capability of two-state ReRAMs to implement Boolean logic functionality gained wide interest. Here, we report on seven-states Tantalum Oxide Devices,...

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Autores principales: Kim, Wonjoo, Chattopadhyay, Anupam, Siemon, Anne, Linn, Eike, Waser, Rainer, Rana, Vikas
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5105152/
https://www.ncbi.nlm.nih.gov/pubmed/27834352
http://dx.doi.org/10.1038/srep36652
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author Kim, Wonjoo
Chattopadhyay, Anupam
Siemon, Anne
Linn, Eike
Waser, Rainer
Rana, Vikas
author_facet Kim, Wonjoo
Chattopadhyay, Anupam
Siemon, Anne
Linn, Eike
Waser, Rainer
Rana, Vikas
author_sort Kim, Wonjoo
collection PubMed
description Redox-based resistive switching random access memory (ReRAM) offers excellent properties to implement future non-volatile memory arrays. Recently, the capability of two-state ReRAMs to implement Boolean logic functionality gained wide interest. Here, we report on seven-states Tantalum Oxide Devices, which enable the realization of an intrinsic modular arithmetic using a ternary number system. Modular arithmetic, a fundamental system for operating on numbers within the limit of a modulus, is known to mathematicians since the days of Euclid and finds applications in diverse areas ranging from e-commerce to musical notations. We demonstrate that multistate devices not only reduce the storage area consumption drastically, but also enable novel in-memory operations, such as computing using high-radix number systems, which could not be implemented using two-state devices. The use of high radix number system reduces the computational complexity by reducing the number of needed digits. Thus the number of calculation operations in an addition and the number of logic devices can be reduced.
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spelling pubmed-51051522016-11-17 Multistate Memristive Tantalum Oxide Devices for Ternary Arithmetic Kim, Wonjoo Chattopadhyay, Anupam Siemon, Anne Linn, Eike Waser, Rainer Rana, Vikas Sci Rep Article Redox-based resistive switching random access memory (ReRAM) offers excellent properties to implement future non-volatile memory arrays. Recently, the capability of two-state ReRAMs to implement Boolean logic functionality gained wide interest. Here, we report on seven-states Tantalum Oxide Devices, which enable the realization of an intrinsic modular arithmetic using a ternary number system. Modular arithmetic, a fundamental system for operating on numbers within the limit of a modulus, is known to mathematicians since the days of Euclid and finds applications in diverse areas ranging from e-commerce to musical notations. We demonstrate that multistate devices not only reduce the storage area consumption drastically, but also enable novel in-memory operations, such as computing using high-radix number systems, which could not be implemented using two-state devices. The use of high radix number system reduces the computational complexity by reducing the number of needed digits. Thus the number of calculation operations in an addition and the number of logic devices can be reduced. Nature Publishing Group 2016-11-11 /pmc/articles/PMC5105152/ /pubmed/27834352 http://dx.doi.org/10.1038/srep36652 Text en Copyright © 2016, The Author(s) http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Kim, Wonjoo
Chattopadhyay, Anupam
Siemon, Anne
Linn, Eike
Waser, Rainer
Rana, Vikas
Multistate Memristive Tantalum Oxide Devices for Ternary Arithmetic
title Multistate Memristive Tantalum Oxide Devices for Ternary Arithmetic
title_full Multistate Memristive Tantalum Oxide Devices for Ternary Arithmetic
title_fullStr Multistate Memristive Tantalum Oxide Devices for Ternary Arithmetic
title_full_unstemmed Multistate Memristive Tantalum Oxide Devices for Ternary Arithmetic
title_short Multistate Memristive Tantalum Oxide Devices for Ternary Arithmetic
title_sort multistate memristive tantalum oxide devices for ternary arithmetic
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5105152/
https://www.ncbi.nlm.nih.gov/pubmed/27834352
http://dx.doi.org/10.1038/srep36652
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