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Multistate Memristive Tantalum Oxide Devices for Ternary Arithmetic
Redox-based resistive switching random access memory (ReRAM) offers excellent properties to implement future non-volatile memory arrays. Recently, the capability of two-state ReRAMs to implement Boolean logic functionality gained wide interest. Here, we report on seven-states Tantalum Oxide Devices,...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2016
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5105152/ https://www.ncbi.nlm.nih.gov/pubmed/27834352 http://dx.doi.org/10.1038/srep36652 |
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author | Kim, Wonjoo Chattopadhyay, Anupam Siemon, Anne Linn, Eike Waser, Rainer Rana, Vikas |
author_facet | Kim, Wonjoo Chattopadhyay, Anupam Siemon, Anne Linn, Eike Waser, Rainer Rana, Vikas |
author_sort | Kim, Wonjoo |
collection | PubMed |
description | Redox-based resistive switching random access memory (ReRAM) offers excellent properties to implement future non-volatile memory arrays. Recently, the capability of two-state ReRAMs to implement Boolean logic functionality gained wide interest. Here, we report on seven-states Tantalum Oxide Devices, which enable the realization of an intrinsic modular arithmetic using a ternary number system. Modular arithmetic, a fundamental system for operating on numbers within the limit of a modulus, is known to mathematicians since the days of Euclid and finds applications in diverse areas ranging from e-commerce to musical notations. We demonstrate that multistate devices not only reduce the storage area consumption drastically, but also enable novel in-memory operations, such as computing using high-radix number systems, which could not be implemented using two-state devices. The use of high radix number system reduces the computational complexity by reducing the number of needed digits. Thus the number of calculation operations in an addition and the number of logic devices can be reduced. |
format | Online Article Text |
id | pubmed-5105152 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2016 |
publisher | Nature Publishing Group |
record_format | MEDLINE/PubMed |
spelling | pubmed-51051522016-11-17 Multistate Memristive Tantalum Oxide Devices for Ternary Arithmetic Kim, Wonjoo Chattopadhyay, Anupam Siemon, Anne Linn, Eike Waser, Rainer Rana, Vikas Sci Rep Article Redox-based resistive switching random access memory (ReRAM) offers excellent properties to implement future non-volatile memory arrays. Recently, the capability of two-state ReRAMs to implement Boolean logic functionality gained wide interest. Here, we report on seven-states Tantalum Oxide Devices, which enable the realization of an intrinsic modular arithmetic using a ternary number system. Modular arithmetic, a fundamental system for operating on numbers within the limit of a modulus, is known to mathematicians since the days of Euclid and finds applications in diverse areas ranging from e-commerce to musical notations. We demonstrate that multistate devices not only reduce the storage area consumption drastically, but also enable novel in-memory operations, such as computing using high-radix number systems, which could not be implemented using two-state devices. The use of high radix number system reduces the computational complexity by reducing the number of needed digits. Thus the number of calculation operations in an addition and the number of logic devices can be reduced. Nature Publishing Group 2016-11-11 /pmc/articles/PMC5105152/ /pubmed/27834352 http://dx.doi.org/10.1038/srep36652 Text en Copyright © 2016, The Author(s) http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ |
spellingShingle | Article Kim, Wonjoo Chattopadhyay, Anupam Siemon, Anne Linn, Eike Waser, Rainer Rana, Vikas Multistate Memristive Tantalum Oxide Devices for Ternary Arithmetic |
title | Multistate Memristive Tantalum Oxide Devices for Ternary Arithmetic |
title_full | Multistate Memristive Tantalum Oxide Devices for Ternary Arithmetic |
title_fullStr | Multistate Memristive Tantalum Oxide Devices for Ternary Arithmetic |
title_full_unstemmed | Multistate Memristive Tantalum Oxide Devices for Ternary Arithmetic |
title_short | Multistate Memristive Tantalum Oxide Devices for Ternary Arithmetic |
title_sort | multistate memristive tantalum oxide devices for ternary arithmetic |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5105152/ https://www.ncbi.nlm.nih.gov/pubmed/27834352 http://dx.doi.org/10.1038/srep36652 |
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