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Multistate Memristive Tantalum Oxide Devices for Ternary Arithmetic

Redox-based resistive switching random access memory (ReRAM) offers excellent properties to implement future non-volatile memory arrays. Recently, the capability of two-state ReRAMs to implement Boolean logic functionality gained wide interest. Here, we report on seven-states Tantalum Oxide Devices,...

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Detalles Bibliográficos
Autores principales:	Kim, Wonjoo, Chattopadhyay, Anupam, Siemon, Anne, Linn, Eike, Waser, Rainer, Rana, Vikas
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group 2016
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5105152/ https://www.ncbi.nlm.nih.gov/pubmed/27834352 http://dx.doi.org/10.1038/srep36652

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