Reversible voltage dependent transition of abnormal and normal bipolar resistive switching

Clear understanding the mechanism of resistive switching is the important prerequisite for the realization of high performance nonvolatile resistive random access memory. In this paper, binary metal oxide MoO(x) layer sandwiched by ITO and Pt electrodes was taken as a model system, reversible transi...

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Detalles Bibliográficos
Autores principales: Wang, Guangyu, Li, Chen, Chen, Yan, Xia, Yidong, Wu, Di, Xu, Qingyu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5107888/
https://www.ncbi.nlm.nih.gov/pubmed/27841318
http://dx.doi.org/10.1038/srep36953

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5107888/
https://www.ncbi.nlm.nih.gov/pubmed/27841318
http://dx.doi.org/10.1038/srep36953

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