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Reversible voltage dependent transition of abnormal and normal bipolar resistive switching
Clear understanding the mechanism of resistive switching is the important prerequisite for the realization of high performance nonvolatile resistive random access memory. In this paper, binary metal oxide MoO(x) layer sandwiched by ITO and Pt electrodes was taken as a model system, reversible transi...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2016
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5107888/ https://www.ncbi.nlm.nih.gov/pubmed/27841318 http://dx.doi.org/10.1038/srep36953 |