Realisation of magnetically and atomically abrupt half-metal/semiconductor interface: Co(2)FeSi(0.5)Al(0.5)/Ge(111)

Halfmetal-semiconductor interfaces are crucial for hybrid spintronic devices. Atomically sharp interfaces with high spin polarisation are required for efficient spin injection. In this work we show that thin film of half-metallic full Heusler alloy Co(2)FeSi(0.5)Al(0.5) with uniform thickness and B2...

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Detalles Bibliográficos
Autores principales: Nedelkoski, Zlatko, Kuerbanjiang, Balati, Glover, Stephanie E., Sanchez, Ana M., Kepaptsoglou, Demie, Ghasemi, Arsham, Burrows, Christopher W., Yamada, Shinya, Hamaya, Kohei, Ramasse, Quentin M., Hasnip, Philip J., Hase, Thomas, Bell, Gavin R., Hirohata, Atsufumi, Lazarov, Vlado K.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5116668/
https://www.ncbi.nlm.nih.gov/pubmed/27869132
http://dx.doi.org/10.1038/srep37282

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5116668/
https://www.ncbi.nlm.nih.gov/pubmed/27869132
http://dx.doi.org/10.1038/srep37282

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