The Luminescent Inhomogeneity and the Distribution of Zinc Vacancy-Related Acceptor-Like Defects in N-Doped ZnO Microrods

Vertically aligned N-doped ZnO microrods with a hexagonal symmetry were fabricated via the chemical vapor transport with abundant N(2)O as both O and N precursors. We have demonstrated the suppression of the zinc interstitial-related shallow donor defects and have identified the zinc vacancy-related...

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Detalles Bibliográficos
Autores principales: Yao, Zhengrong, Tang, Kun, Xu, Zhonghua, Ye, Jiandong, Zhu, Shunming, Gu, Shulin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2016
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5120051/
https://www.ncbi.nlm.nih.gov/pubmed/27878574
http://dx.doi.org/10.1186/s11671-016-1736-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5120051/
https://www.ncbi.nlm.nih.gov/pubmed/27878574
http://dx.doi.org/10.1186/s11671-016-1736-7

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