Gate-Controlled WSe(2) Transistors Using a Buried Triple-Gate Structure

In the present paper, we show tungsten diselenide (WSe(2)) devices that can be tuned to operate as n-type and p-type field-effect transistors (FETs) as well as band-to-band tunnel transistors on the same flake. Source, channel, and drain areas of the WSe(2) flake are adjusted, using buried triple-ga...

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Detalles Bibliográficos
Autores principales: Müller, M. R., Salazar, R., Fathipour, S., Xu, H., Kallis, K., Künzelmann, U., Seabaugh, A., Appenzeller, J., Knoch, J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2016
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5120059/
https://www.ncbi.nlm.nih.gov/pubmed/27878575
http://dx.doi.org/10.1186/s11671-016-1728-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5120059/
https://www.ncbi.nlm.nih.gov/pubmed/27878575
http://dx.doi.org/10.1186/s11671-016-1728-7

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