Gate-Controlled WSe(2) Transistors Using a Buried Triple-Gate Structure

In the present paper, we show tungsten diselenide (WSe(2)) devices that can be tuned to operate as n-type and p-type field-effect transistors (FETs) as well as band-to-band tunnel transistors on the same flake. Source, channel, and drain areas of the WSe(2) flake are adjusted, using buried triple-ga...

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Autores principales: Müller, M. R., Salazar, R., Fathipour, S., Xu, H., Kallis, K., Künzelmann, U., Seabaugh, A., Appenzeller, J., Knoch, J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2016
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5120059/
https://www.ncbi.nlm.nih.gov/pubmed/27878575
http://dx.doi.org/10.1186/s11671-016-1728-7
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author Müller, M. R.
Salazar, R.
Fathipour, S.
Xu, H.
Kallis, K.
Künzelmann, U.
Seabaugh, A.
Appenzeller, J.
Knoch, J.
author_facet Müller, M. R.
Salazar, R.
Fathipour, S.
Xu, H.
Kallis, K.
Künzelmann, U.
Seabaugh, A.
Appenzeller, J.
Knoch, J.
author_sort Müller, M. R.
collection PubMed
description In the present paper, we show tungsten diselenide (WSe(2)) devices that can be tuned to operate as n-type and p-type field-effect transistors (FETs) as well as band-to-band tunnel transistors on the same flake. Source, channel, and drain areas of the WSe(2) flake are adjusted, using buried triple-gate substrates with three independently controllable gates. The device characteristics found in the tunnel transistor configuration are determined by the particular geometry of the buried triple-gate structure, consistent with a simple estimation of the expected off-state behavior.
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spelling pubmed-51200592016-12-08 Gate-Controlled WSe(2) Transistors Using a Buried Triple-Gate Structure Müller, M. R. Salazar, R. Fathipour, S. Xu, H. Kallis, K. Künzelmann, U. Seabaugh, A. Appenzeller, J. Knoch, J. Nanoscale Res Lett Nano Express In the present paper, we show tungsten diselenide (WSe(2)) devices that can be tuned to operate as n-type and p-type field-effect transistors (FETs) as well as band-to-band tunnel transistors on the same flake. Source, channel, and drain areas of the WSe(2) flake are adjusted, using buried triple-gate substrates with three independently controllable gates. The device characteristics found in the tunnel transistor configuration are determined by the particular geometry of the buried triple-gate structure, consistent with a simple estimation of the expected off-state behavior. Springer US 2016-11-22 /pmc/articles/PMC5120059/ /pubmed/27878575 http://dx.doi.org/10.1186/s11671-016-1728-7 Text en © The Author(s). 2016 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Nano Express
Müller, M. R.
Salazar, R.
Fathipour, S.
Xu, H.
Kallis, K.
Künzelmann, U.
Seabaugh, A.
Appenzeller, J.
Knoch, J.
Gate-Controlled WSe(2) Transistors Using a Buried Triple-Gate Structure
title Gate-Controlled WSe(2) Transistors Using a Buried Triple-Gate Structure
title_full Gate-Controlled WSe(2) Transistors Using a Buried Triple-Gate Structure
title_fullStr Gate-Controlled WSe(2) Transistors Using a Buried Triple-Gate Structure
title_full_unstemmed Gate-Controlled WSe(2) Transistors Using a Buried Triple-Gate Structure
title_short Gate-Controlled WSe(2) Transistors Using a Buried Triple-Gate Structure
title_sort gate-controlled wse(2) transistors using a buried triple-gate structure
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5120059/
https://www.ncbi.nlm.nih.gov/pubmed/27878575
http://dx.doi.org/10.1186/s11671-016-1728-7
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