Hot electron induced non-saturation current behavior at high electric field in InAlN/GaN heterostructures with ultrathin barrier

The high-field transport characteristics of nearly lattice-matched InAlN/GaN heterostructures with different barrier thickness were investigated. It is found that the current in the InAlN/GaN heterostructures with ultrathin barrier shows unsaturated behaviors (or secondary rising) at high voltage, w...

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Detalles Bibliográficos
Autores principales: Guo, Lei, Yang, Xuelin, Hu, Anqi, Feng, Zhihong, Lv, Yuanjie, Zhang, Jie, Cheng, Jianpeng, Tang, Ning, Wang, Xinqiang, Ge, Weikun, Shen, Bo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5120260/
https://www.ncbi.nlm.nih.gov/pubmed/27876766
http://dx.doi.org/10.1038/srep37415

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5120260/
https://www.ncbi.nlm.nih.gov/pubmed/27876766
http://dx.doi.org/10.1038/srep37415

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