Highly Bendable In-Ga-ZnO Thin Film Transistors by Using a Thermally Stable Organic Dielectric Layer

Flexible In-Ga-ZnO (IGZO) thin film transistor (TFT) on a polyimide substrate is produced by employing a thermally stable SA7 organic material as the multi-functional barrier and dielectric layers. The IGZO channel layer was sputtered at Ar:O(2) gas flow rate of 100:1 sccm and the fabricated TFT exh...

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Detalles Bibliográficos
Autores principales: Kumaresan, Yogeenth, Pak, Yusin, Lim, Namsoo, kim, Yonghun, Park, Min-Ji, Yoon, Sung-Min, Youn, Hyoc-Min, Lee, Heon, Lee, Byoung Hun, Jung, Gun Young
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5120347/
https://www.ncbi.nlm.nih.gov/pubmed/27876893
http://dx.doi.org/10.1038/srep37764

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5120347/
https://www.ncbi.nlm.nih.gov/pubmed/27876893
http://dx.doi.org/10.1038/srep37764

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