Reduction of Polarization Field Strength in Fully Strained c-Plane InGaN/(In)GaN Multiple Quantum Wells Grown by MOCVD

The polarization fields in c-plane InGaN/(In)GaN multiple quantum well (MQW) structures grown on sapphire substrate by metal-organic chemical vapor deposition are investigated in this paper. The indium composition in the quantum wells varies from 14.8 to 26.5% for different samples. The photolumines...

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Detalles Bibliográficos
Autores principales: Zhang, Feng, Ikeda, Masao, Zhang, Shu-Ming, Liu, Jian-Ping, Tian, Ai-Qin, Wen, Peng-Yan, Cheng, Yang, Yang, Hui
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2016
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5122532/
https://www.ncbi.nlm.nih.gov/pubmed/27885621
http://dx.doi.org/10.1186/s11671-016-1732-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5122532/
https://www.ncbi.nlm.nih.gov/pubmed/27885621
http://dx.doi.org/10.1186/s11671-016-1732-y

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