Determination of the electron-capture coefficients and the concentration of free electrons in GaN from time-resolved photoluminescence

Point defects in high-purity GaN layers grown by hydride vapor phase epitaxy are studied by steady-state and time-resolved photoluminescence (PL). The electron-capture coefficients for defects responsible for the dominant defect-related PL bands in this material are found. The capture coefficients f...

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Detalles Bibliográficos
Autores principales: Reshchikov, M. A., McNamara, J. D., Toporkov, M., Avrutin, V., Morkoç, H., Usikov, A., Helava, H., Makarov, Yu.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5128818/
https://www.ncbi.nlm.nih.gov/pubmed/27901025
http://dx.doi.org/10.1038/srep37511

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5128818/
https://www.ncbi.nlm.nih.gov/pubmed/27901025
http://dx.doi.org/10.1038/srep37511

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