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Determination of the electron-capture coefficients and the concentration of free electrons in GaN from time-resolved photoluminescence
Point defects in high-purity GaN layers grown by hydride vapor phase epitaxy are studied by steady-state and time-resolved photoluminescence (PL). The electron-capture coefficients for defects responsible for the dominant defect-related PL bands in this material are found. The capture coefficients f...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2016
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5128818/ https://www.ncbi.nlm.nih.gov/pubmed/27901025 http://dx.doi.org/10.1038/srep37511 |