Electrical Properties of Ultrathin Hf-Ti-O Higher k Gate Dielectric Films and Their Application in ETSOI MOSFET

Ultrathin Hf-Ti-O higher k gate dielectric films (~2.55 nm) have been prepared by atomic layer deposition. Their electrical properties and application in ETSOI (fully depleted extremely thin SOI) PMOSFETs were studied. It is found that at the Ti concentration of Ti/(Ti + Hf) ~9.4%, low equivalent ga...

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Detalles Bibliográficos
Autores principales: Xiong, Yuhua, Chen, Xiaoqiang, Wei, Feng, Du, Jun, Zhao, Hongbin, Tang, Zhaoyun, Tang, Bo, Wang, Wenwu, Yan, Jiang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2016
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5130927/
https://www.ncbi.nlm.nih.gov/pubmed/27905095
http://dx.doi.org/10.1186/s11671-016-1754-5

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5130927/
https://www.ncbi.nlm.nih.gov/pubmed/27905095
http://dx.doi.org/10.1186/s11671-016-1754-5

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