Passivation and characterization of charge defects in ambipolar silicon quantum dots

In this Report we show the role of charge defects in the context of the formation of electrostatically defined quantum dots. We introduce a barrier array structure to probe defects at multiple locations in a single device. We measure samples both before and after an annealing process which uses an A...

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Detalles Bibliográficos
Autores principales: Spruijtenburg, Paul C., Amitonov, Sergey V., Mueller, Filipp, van der Wiel, Wilfred G., Zwanenburg, Floris A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5138628/
https://www.ncbi.nlm.nih.gov/pubmed/27922048
http://dx.doi.org/10.1038/srep38127

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5138628/
https://www.ncbi.nlm.nih.gov/pubmed/27922048
http://dx.doi.org/10.1038/srep38127

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