Analysis of the Negative-SET Behaviors in Cu/ZrO(2)/Pt Devices

Metal oxide-based electrochemical metallization memory (ECM) shows promising performance for next generation non-volatile memory. The negative-SET behavior has been observed in various oxide-based ECM devices. But the underlying mechanism of this behavior remains unaddressed and the role of the meta...

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Detalles Bibliográficos
Autores principales: Liu, Sen, Zhao, Xiaolong, Li, Qingjiang, Li, Nan, Wang, Wei, Liu, Qi, Xu, Hui
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2016
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5142190/
https://www.ncbi.nlm.nih.gov/pubmed/27924625
http://dx.doi.org/10.1186/s11671-016-1762-5

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5142190/
https://www.ncbi.nlm.nih.gov/pubmed/27924625
http://dx.doi.org/10.1186/s11671-016-1762-5

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