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Analysis of the Negative-SET Behaviors in Cu/ZrO(2)/Pt Devices
Metal oxide-based electrochemical metallization memory (ECM) shows promising performance for next generation non-volatile memory. The negative-SET behavior has been observed in various oxide-based ECM devices. But the underlying mechanism of this behavior remains unaddressed and the role of the meta...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer US
2016
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5142190/ https://www.ncbi.nlm.nih.gov/pubmed/27924625 http://dx.doi.org/10.1186/s11671-016-1762-5 |
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author | Liu, Sen Zhao, Xiaolong Li, Qingjiang Li, Nan Wang, Wei Liu, Qi Xu, Hui |
author_facet | Liu, Sen Zhao, Xiaolong Li, Qingjiang Li, Nan Wang, Wei Liu, Qi Xu, Hui |
author_sort | Liu, Sen |
collection | PubMed |
description | Metal oxide-based electrochemical metallization memory (ECM) shows promising performance for next generation non-volatile memory. The negative-SET behavior has been observed in various oxide-based ECM devices. But the underlying mechanism of this behavior remains unaddressed and the role of the metal cation and oxygen vacancy in this behavior is unclear. In this work, we have observed two kinds of negative-SET (labeled as N-SET1 and N-SET2) behaviors in our Cu/ZrO(2)/Pt devices. Both the two behaviors can result in hard breakdown due to the high compliance current in reset process. The I-V characteristic shows that the two negative-SET behaviors have an obvious difference in operation voltage. Using four-probe resistance measurement method, the resistance-temperature characteristics of the ON-state after various negative-SET behaviors have been studied. The temperature dependence results demonstrate that the N-SET1 behavior is dominated by Cu conductive filament (CF) reformation caused by the Cu CF overgrowth phenomenon while the N-SET2 is related to the formation of oxygen vacancy CF. This work may provide a comprehensive understanding of the switching mechanism in oxide-based ECM devices. |
format | Online Article Text |
id | pubmed-5142190 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2016 |
publisher | Springer US |
record_format | MEDLINE/PubMed |
spelling | pubmed-51421902016-12-23 Analysis of the Negative-SET Behaviors in Cu/ZrO(2)/Pt Devices Liu, Sen Zhao, Xiaolong Li, Qingjiang Li, Nan Wang, Wei Liu, Qi Xu, Hui Nanoscale Res Lett Nano Express Metal oxide-based electrochemical metallization memory (ECM) shows promising performance for next generation non-volatile memory. The negative-SET behavior has been observed in various oxide-based ECM devices. But the underlying mechanism of this behavior remains unaddressed and the role of the metal cation and oxygen vacancy in this behavior is unclear. In this work, we have observed two kinds of negative-SET (labeled as N-SET1 and N-SET2) behaviors in our Cu/ZrO(2)/Pt devices. Both the two behaviors can result in hard breakdown due to the high compliance current in reset process. The I-V characteristic shows that the two negative-SET behaviors have an obvious difference in operation voltage. Using four-probe resistance measurement method, the resistance-temperature characteristics of the ON-state after various negative-SET behaviors have been studied. The temperature dependence results demonstrate that the N-SET1 behavior is dominated by Cu conductive filament (CF) reformation caused by the Cu CF overgrowth phenomenon while the N-SET2 is related to the formation of oxygen vacancy CF. This work may provide a comprehensive understanding of the switching mechanism in oxide-based ECM devices. Springer US 2016-12-07 /pmc/articles/PMC5142190/ /pubmed/27924625 http://dx.doi.org/10.1186/s11671-016-1762-5 Text en © The Author(s). 2016 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. |
spellingShingle | Nano Express Liu, Sen Zhao, Xiaolong Li, Qingjiang Li, Nan Wang, Wei Liu, Qi Xu, Hui Analysis of the Negative-SET Behaviors in Cu/ZrO(2)/Pt Devices |
title | Analysis of the Negative-SET Behaviors in Cu/ZrO(2)/Pt Devices |
title_full | Analysis of the Negative-SET Behaviors in Cu/ZrO(2)/Pt Devices |
title_fullStr | Analysis of the Negative-SET Behaviors in Cu/ZrO(2)/Pt Devices |
title_full_unstemmed | Analysis of the Negative-SET Behaviors in Cu/ZrO(2)/Pt Devices |
title_short | Analysis of the Negative-SET Behaviors in Cu/ZrO(2)/Pt Devices |
title_sort | analysis of the negative-set behaviors in cu/zro(2)/pt devices |
topic | Nano Express |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5142190/ https://www.ncbi.nlm.nih.gov/pubmed/27924625 http://dx.doi.org/10.1186/s11671-016-1762-5 |
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