Two different phase-change origins with chemical- and structural-phase-changes in C doped (1.5 wt.%) In(3)Sb(1)Te(2)

We fabricated C-doped (1.5 wt.%) In(3)Sb(1)Te(2) (CIST) thin films with amorphous phase (a-CIST) using a sputter method. Two electrical-phase-changes at 250 and 275 °C were observed in the sheet resistance measurement. In order to understand the origin of these electrical-phase-changes, all samples...

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Detalles Bibliográficos
Autores principales: Lee, Y. M., Lee, S. Y., Sasaki, T., Kim, K., Ahn, D., Jung, M.-C.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5144130/
https://www.ncbi.nlm.nih.gov/pubmed/27929133
http://dx.doi.org/10.1038/srep38663

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5144130/
https://www.ncbi.nlm.nih.gov/pubmed/27929133
http://dx.doi.org/10.1038/srep38663

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