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Two different phase-change origins with chemical- and structural-phase-changes in C doped (1.5 wt.%) In(3)Sb(1)Te(2)
We fabricated C-doped (1.5 wt.%) In(3)Sb(1)Te(2) (CIST) thin films with amorphous phase (a-CIST) using a sputter method. Two electrical-phase-changes at 250 and 275 °C were observed in the sheet resistance measurement. In order to understand the origin of these electrical-phase-changes, all samples...
Autores principales: | Lee, Y. M., Lee, S. Y., Sasaki, T., Kim, K., Ahn, D., Jung, M.-C. |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2016
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5144130/ https://www.ncbi.nlm.nih.gov/pubmed/27929133 http://dx.doi.org/10.1038/srep38663 |
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